二硫化钼
X射线光电子能谱
成核
硫系化合物
单层
拉曼光谱
化学气相沉积
钼
扫描电子显微镜
三氧化钼
材料科学
硫黄
基质(水族馆)
化学工程
化学
纳米技术
无机化学
光电子学
有机化学
冶金
光学
物理
海洋学
地质学
工程类
复合材料
作者
Krishna Moorthy Ponnusamy,Navanya Raveendran,Santhosh Durairaj,Senthil Kumar Eswaran,S. Chandramohan
标识
DOI:10.1016/j.jpcs.2023.111575
摘要
Chemical vapor deposition (CVD) is the broadly used technique in the synthesis of 2D materials for various electronic and optoelectronic devices. In this study, we aim to understand the precise phase transition of molybdenum trioxide (MoO3), the most commonly used transition metal precursor, under the influence of sulfur in a CVD process that ultimately leads to the growth of mono-to few-layer molybdenum disulfide (MoS2) with varying morphologies. For this, we employed a space-confined growth method and carried out a methodical spectroscopic analysis to understand the step-by-step reduction of MoO3 under reaction with sulfur vapors and its subsequent transformation to MoS2 on a SiO2 substrate. The sulfur-promoted reduction of MoO3 forming molybdenum dioxide (MoO2), followed by molybdenum oxysulfide (MoOS2) to MoOS2/MoS2 hybrid crystals, and finally monolayer (few layer) triangle (hexagonal) MoS2 crystals, is discussed. The results show that the nucleation presumably initiated by oxy-chalcogenide micro-particles that serve as heterogeneous monolayer nucleation sites. We validate our findings with optical and scanning electron microscope images, micro-Raman, photoluminescence (PL), and x-ray photoelectron spectroscopy (XPS) studies. Our findings can contribute to a better understanding of the growth processes of sequential sulfurization reactions.
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