The impact on mc-Si ingot grown in a directional solidification furnace by partially replacing the susceptor bottom with an insulation material: A numerical investigation

Directional solidification (DS) is the major process for growing the multi-crystalline silicon (mc-Si) ingots with low cost and low power consumption. Here, the investigation of mc-Si growth has been carried out by two-dimensional numerical simulations on the simplified axisymmetric DS furnace. The mc-Si ingots were grown in the DS furnace with conventional susceptor and a furnace with partially replaced susceptor bottom. The susceptor bottom of size 278 mm × 42 mm × 20 mm is partially replaced with an insulation material. The temperature distribution and melt-crystal interface shape of the grown ingots were analysed at 25%, 50% and 75% of the solidification fraction. The von Mises stress and max shear stress were investigated on both the ingots at the end of the DS-Si process. The better quality mc-Si ingot with low power consumption has been attained by the partial replacement of susceptor bottom with insulation block.