Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

Silicon Carbide (SiC) is an important substrate material for electronic components due to its excellent properties. Compared with wire sawing technology, laser slicing technology is a promising method that can achieve the slicing of SiC wafers without kerf-loss. In this paper, the modified layer for SiC slicing was obtained by ultrafast laser processing inside semi-insulating SiC wafers. We studied the effect of pulse duration on the internal modification process and discussed the formation mechanism of the modified layer according to morphology and composition. The effect of laser processing parameters on the morphology of the modified layer was systematically studied as well as tensile tests were carried out on samples with different morphologies of the modified layer, which revealed the effect of the modified layer on the peeling. The results show that the increase in pulse duration favors the formation of internal modified structures, which are mainly composed of amorphous Si, amorphous C, amorphous SiC and SiC crystals. The change of process parameters will affect the type of structure and the formation of cracks in the modified layer. Only the sample with a single-crack layer was exfoliated successfully, proving that the crack morphology has an essential influence on the peeling.