光电探测器
响应度
材料科学
光电子学
异质结
比探测率
光电二极管
石墨烯
纳米技术
作者
Shuren Zhou,Haodong Fan,Shaofeng Wen,Rui Zhang,Yi Yin,Changyong Lan,Chun Li,Yong Liu
标识
DOI:10.1002/adom.202301982
摘要
Abstract Photodetectors with high responsivity, fast response, and broad spectral response are of great importance for a wide range of applications in fundamental science and various industries. However, conventional photodiodes operating at low bias voltage do not provide any gain. The graphene (Gr)/Si van der Waals heterostructure, on the other hand, offers a potential gain due to the limited density of states near the Dirac point. In this work, a highly photoresponsive broadband pyramidal black‐Si/Gr heterojunction photodetector is presented. The device, with an active area of 5×5 mm 2 and a bias voltage of −5 V, exhibits an ultra‐high responsivity of 4.1 A W −1 . The photoresponsivity can be further increased to 1379 A W −1 by reducing the device area. Comparative experiments reveal that the pyramidal black‐Si/Gr photodetectors exhibit the largest responsivity compared with pyramidal‐Si/Gr and flat‐Si/Gr photodetectors. The gain in pyramidal black‐Si/Gr photodetectors is attributed to both the pyramidal nanoporous structures and the shift of the Fermi level of Gr under bias. Furthermore, the high responsivity and stable operation of the photodetectors enable the demonstration of imaging applications. The results provide a new strategy for enhancing the performance of photodetectors based on 2D materials.
科研通智能强力驱动
Strongly Powered by AbleSci AI