Design and performance evaluation of MoS2 photodetector in vertical MSM configuration

Flexible photodetectors based on transition metal dichalcogenides are gaining significant prominence due to their remarkable optical and electronic properties. This study presents an in-depth performance assessment of molybdenum disulfide (MoS2) as the absorber layer within a vertical Au/MoS2/FTO metal-semiconductor-metal (MSM) photodetector configuration. Utilizing one-dimensional solar cell capacitance simulation (SCAPS-1D) software, we conduct a comprehensive numerical investigation into the photodetector's performance. The systematic simulation of various physical properties of the MoS2 absorber layer, including thickness, doping, and bulk defect density, reveals optimized values of 1 μm, 1018 cm−3, and 1015 cm−3, respectively. The optimized device exhibits peak responsiveness under 700 nm wavelength spectrum illumination, boasting a responsivity of 0.37 AW−1 and a detectivity of 3.27 × 1014 Jones. Furthermore, the impact of temperature and incident light power on the optimized photodetector is thoroughly examined. The proposed photodetector demonstrates considerable potential for cost-effective, easily manufacturable, and durable wearable electronics applications.