抛光
材料科学
钻石
聚晶金刚石
微晶
等离子体
等离子体活化
纳米技术
光电子学
冶金
物理
量子力学
作者
Runhua Gao,Xinhua Wang,Fengwen Mu,Xiaojing Li,Chong Wei,Wu Zhou,Jinan Shi,Ye Tian,Xiangjie Xing,Hongyue Li,Sen Huang,Qimeng Jiang,Wei Ke,Xinyu Liu
标识
DOI:10.1016/j.jallcom.2024.174075
摘要
Direct heterogeneous integration of GaN on diamond enhances device performance and reliability for high-power applications, while the implementation on thick GaN films and polycrystalline diamond (p-diamond) substrates remains challenging. In this study, the direct bonding between thick GaN films (∼370 μm) and p-diamond substrates was achieved. A dynamic plasma polishing (DPP) technique was adopted on the diamond to flatten surficial spikes from maximum 15 nm to 1.2 nm, obtaining a smooth surface with 0.29 nm Ra, achieving a robust GaN/diamond bonding with high bonding rate of ∼92% at room temperature combining the surface-activated bonding (SAB) method. The chemical status, thermal stress, and interfacial microstructures of GaN/diamond heterostructures were analyzed, revealing a residual stress of ∼200 MPa at the GaN/diamond interface, and the asymmetric increase of interfacial stress at rising temperature demonstrates the effectiveness of amorphous interlayer to release the stress.
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