高电子迁移率晶体管
光电子学
铁电性
材料科学
氮化镓
纳米技术
电气工程
晶体管
工程类
电压
电介质
图层(电子)
作者
Dariskhem Pyngrope,Nidhi Chaturvedi,S. Dasgupta,A. Hospodková,Shubhankar Majumdar
标识
DOI:10.1088/1361-6641/ad4d5a
摘要
Abstract This correspondence introduces a concise depiction of a High Electron Mobility transistor (HEMT) utilizing a model that incorporates the
effect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley Equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteristics (Id − Vgs), which is mainly attributed to trapping and de-trapping of charge carriers at the dielectric/semiconductor interface. Modifying the S.E. made it possible to replicate the behavior observed in experimental HEMT accurately. We reported the modified drain current empirical expressions for the ScAlN/AlGaN/GaN HEMT that considers the FE polarization. The results of this study showed good agreement between the Id − Vgs characteristics obtained from the analytical and experimental data, with a root mean square deviation (RMSD) error of 0.97% and a mean squared error (MSE) error of 0.94%. This analytical drain current model, presented herein for the first time, incorporates a limited number of fitting parameters. Therefore, enhancing the computational efficiency to assess the performance of ferroelectric GaN HEMTs for usage in wide-area electronics.
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