材料科学
光电探测器
表面工程
光电子学
曲面(拓扑)
国家(计算机科学)
工程物理
纳米技术
计算机科学
工程类
几何学
数学
算法
作者
Jinjin Wang,Sai Zhang,Xueqiang Ji,Mengcheng Li,Jizhou Zhang,Xue Li,Ran Tian,Chao Lü,Weihua Tang,Peigang Li
标识
DOI:10.1016/j.mtphys.2024.101461
摘要
Gallium oxide (Ga2O3) with a wide bandgap is emerging as one of the most promising candidates for solar-blind photodetectors (SBPDs). However, the practical application of Ga2O3-based SBPDs is impeded by substantial defects-related leakage currents, sluggish response speed, and high-cost, making their practical applications face great challenges. Here, we proposed strategic films growth regulation and surface state engineering to grow high-quality yet economical β-Ga2O3 films, thereby achieving high-performance SBPDs. High-resolution transmission electron microscopy revealed the presence of high-quality films with an extremely regular arrangement of β-Ga2O3 ( 01) planes. The full width at half maximum and root mean square roughness values are 0.07° and 0.716 nm, respectively. The β-Ga2O3 films demonstrated a significant reduction in VO concentrations after O2/N2 plasma treatment. This process can effectively minimize thermal damage to the sample surface while retaining highly reactive free radicals. The photocurrents of devices can be further enhanced, leading to larger PDCRs of 8.6×107, through N2 plasma treatment. Moreover, the films effectually suppress the persistent photoconductivity effect with τr and τd values of 5.31/0.97 s and 0.49/0.87 s before and after N2 plasma treatment, respectively. We have demonstrated the O2/N2 plasma treatment influence mechanism on photoelectronic performance. This study provides a practical approach to growing high-quality β-Ga2O3 films and preparing high-performance but low-cost Ga2O3-based SBPDs.
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