材料科学
电容
超级电容器
电容感应
兴奋剂
纳米花
五氧化二铁
光电子学
电极
电解质
电容器
钒
电化学
纳米技术
化学
电气工程
纳米结构
冶金
物理化学
电压
工程类
作者
Keli Wang,Fangxuan Wang,Lei Qian,Dandan Wang,Yongqi Liu
出处
期刊:Langmuir
[American Chemical Society]
日期:2024-05-03
卷期号:40 (19): 10059-10069
被引量:4
标识
DOI:10.1021/acs.langmuir.4c00229
摘要
Due to its ultrahigh theoretical capacitance, vanadium pentoxide (V2O5) is considered to be a valid candidate for advanced supercapacitors. However, because of the low electron/electrolyte transfer rate, the capacitive performance still remains to be improved. In this report, Cu doping is adopted to improve the capacitive performance by a two-steps strategy consisting of microwave-assisted solvothermal and postannealing treatments. The electrochemical results indicate that the Cu doping was beneficial for improving the specific capacitance, extending the potential window, and improving the rate ability and long-term stability of V2O5. Furthermore, the mechanism for the performance improvement is explained in detail by combining theoretical calculation and experiments. The results indicated that, compared with that of undoped V2O5, the larger interplanar spacing, better electrical conductivity, a larger proportion of V3+/V4+, and more abundant oxygen vacancies result in an improved capacitive performance. Our proposed Cu-doped V2O5 (Cu-V2O5) can be used as both a positive electrode and a negative electrode for the assembly of the symmetric supercapacitor, which can be used as an energy storage device for light emitting diode lamps.
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