量子点
光电子学
二极管
材料科学
发光二极管
电子迁移率
热稳定性
热的
化学
物理
有机化学
气象学
作者
Chenguang Li,Wei Zheng,Dan Liu,Xinyue Hu,Zhenling Liu,Zhongfeng Duan,Yan Fang,Xiaohong Jiang,Shujie Wang,Zuliang Du
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-05-06
卷期号:24 (19): 5729-5736
标识
DOI:10.1021/acs.nanolett.4c00727
摘要
Quantum-dot light-emitting diodes (QLEDs), a kind of promising optoelectronic device, demonstrate potential superiority in next-generation display technology. Thermal cross-linked hole transport materials (HTMs) have been employed in solution-processed QLEDs due to their excellent thermal stability and solvent resistance, whereas the unbalanced charge injection and high cross-linking temperature of cross-linked HTMs can inhibit the efficiency of QLEDs and limit their application. Herein, a low-temperature cross-linked HTM of 4,4′-bis(3-(((4-vinylbenzyl)oxy)methyl)-9H-carbazol-9-yl)-1,1′-biphenyl (DV-CBP) with a flexible styrene side chain is introduced, which reduces the cross-linking temperature to 150 °C and enhances the hole mobility up to 1.01 × 10–3 cm2 V–1 s–1. More importantly, the maximum external quantum efficiency of 21.35% is successfully obtained on the basis of the DV-CBP as a cross-linked hole transport layer (HTL) for blue QLEDs. The low-temperature cross-linked high-mobility HTL using flexible side chains could be an excellent alternative for future HTL development.
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