光电探测器
响应度
光电子学
材料科学
锗
探测器
吸收(声学)
宽带
光学
暗电流
物理
硅
复合材料
作者
Torgom Yezekyan,Vladimir A. Zenin,Martin Thomaschewski,Radu Malureanu,Sergey I. Bozhevolnyi
出处
期刊:Nanophotonics
[De Gruyter]
日期:2023-05-11
卷期号:12 (12): 2171-2177
被引量:10
标识
DOI:10.1515/nanoph-2023-0116
摘要
Abstract The demand on broadband near-infrared photodetections with high responsivity is becoming increasingly eminent; however its realization remains a significant technological challenge. Here we design, fabricate, and characterize a broadband Ge photodetector (1000–1600 nm), composed of densely packed 230-nm-thick Ge disks of different diameters (255 nm, 320 nm, and 500 nm), placed on top of a 105-nm-thin Ge layer. Using experimentally measured and calculated transmission and absorption spectra, we demonstrate that the absorption and detector responsivity are increased by nearly 2 orders of magnitude, compared to the unstructured Ge photodetector, due to the excitation of magnetic dipole resonances in Ge disks, while preserving a relatively low dark current. Our approach is simple and can be easily adapted to other semiconductor material platforms and operation wavelengths to enable performance improvements of broadband photodetector devices.
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