记忆电阻器
神经形态工程学
纳米技术
机制(生物学)
电阻器
电阻随机存取存储器
计算机科学
材料科学
工程类
电气工程
电压
物理
人工智能
人工神经网络
量子力学
作者
Boyang Xie,Tianyi Xiong,Weiqi Li,Tienan Gao,Jianwei Zong,Ying Liu,Ping Yu
标识
DOI:10.1002/asia.202200682
摘要
Nanofluidic memristors are memory resistors based on nanoconfined fluidic systems exhibiting history-dependent ion conductivity. Toward establishing powerful computing systems beyond the Harvard architecture, these ion-based neuromorphic devices attracted enormous research attention owing to the unique characteristics of ion-based conductors. However, the design of nanofluidic memristor is still at a primary state and a systematic guidance on the rational design of nanofluidic system is desperately required for the development of nanofluidic-based neuromorphic devices. Herein, we proposed a systematic review on the history, main mechanism and potential application of nanofluidic memristors in order to give a prospective view on the design principle of memristors based on nanofluidic systems. Furthermore, based on the present status of these devices, some fundamental challenges for this promising area were further discussed to show the possible application of these ion-based devices.
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