薄膜晶体管
钝化
材料科学
氢
阈值电压
退火(玻璃)
兴奋剂
光电子学
X射线光电子能谱
场效应
空位缺陷
晶体管
分析化学(期刊)
电压
纳米技术
化学
电气工程
化学工程
复合材料
有机化学
结晶学
工程类
色谱法
图层(电子)
作者
Kyumin Lee,Laeyong Jung,Hyunsang Hwang
摘要
High-pressure hydrogen annealing (HPHA) treatment is an effective hydrogen doping method to improve electrical characteristics and stability of InGaZnO (IGZO) thin film transistors (TFTs). The HPHA effects on IGZO TFTs under various pressure conditions were investigated using analytical techniques. Drive current, field effect mobility, subthreshold swing, and bias stress stability of IGZO TFTs were significantly improved as the HPHA pressure was increased up to 20 atm. To analyze the performance enhancement, secondary ion mass spectroscopy, capacitance–voltage analysis, and x-ray photoelectron spectroscopy analysis techniques were performed. As a result, it was confirmed that doped hydrogen is combined with interface trap sites and oxygen vacancy related bulk defect sites, leading to improved subthreshold swing and bias stress stability. Furthermore, bulk trap passivation also contributes to high carrier density, thereby increasing driving current and field effect mobility. With increasing HPHA pressure condition, these effects of trap passivation and increase in the carrier density are more effective due to the heavily injected hydrogen.
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