材料科学
碳纳米管
晶体管
数码产品
纳米技术
碳纳米管场效应晶体管
薄膜晶体管
CMOS芯片
硅
平面的
光电子学
场效应晶体管
电气工程
计算机科学
图层(电子)
电压
工程类
计算机图形学(图像)
出处
期刊:ACS Nano
[American Chemical Society]
日期:2023-11-13
卷期号:17 (22): 22156-22166
被引量:11
标识
DOI:10.1021/acsnano.3c05753
摘要
Semiconducting single-walled carbon nanotubes (CNTs) have ideal electronic, chemical, and mechanical properties and are ideal channel materials for constructing transistors in the post-Moore era. Experiments have shown that CNT-based planar CMOS transistors can be scaled down to sub-10 nm technology nodes, demonstrating excellent performance far exceeding the silicon limit. At the same time, CNT electronic technology is essentially a thin-film transistor technology, which enables the construction of chips on such substrates as glass and polymers with an area of several meters, providing technical support for large-area and flexible electronic applications. In addition, since CNT electronics technology involves only low-temperature processes (less than 400 °C), the monolithic 3D integration of logic and memory devices can be realized which can greatly improve the comprehensive performance of the chip and lead to a thousand-fold performance increase for special data structures, especially in AI applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI