Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga2O3/GaN heterostructure

We have reported unique β-Ga2O3 nanoscale-strips (β-Ga2O3-NSS) morphology on epitaxial Gallium nitride film by thermal oxidation and fabricated heterostructure based self-powered photodetector (PD) operable from 230 nm to 800 nm (UVC to Vis) broad spectral range. The device demonstrates an ultrahigh responsivity of 5.8 × 103 mAW−1 under 266 nm illuminations at zero bias. The developed broadband photodetector at zero applied bias exhibits excellent responsivity of 2600, 56, and 450 mAW−1 under light illuminations of 355 nm, 455 nm, and 532 nm, respectively. In addition, the device also shows very high responsivity (1.6 × 105 mAW−1) with low noise equivalent power (10−13 WHz−1/2) and excellent external quantum efficiency (104%) under the bias of 5 V at 266 nm. The outstanding performance of the developed device is attributed to the light-trapping geometry of the β-Ga2O3-nanoscale-strips. The simple architecture of the device opens up new avenues for the fabrication of the next generation of Ga2O3-based broadband photodetection devices.