材料科学
薄膜晶体管
光电子学
响应度
光电探测器
晶体管
可见光谱
X射线光电子能谱
带隙
纳米技术
电气工程
电压
物理
工程类
图层(电子)
核磁共振
作者
Xinguang Xu,Meng Zhang,Yuyang Yang,Lei Lü,Feng Li,Man Wong,Hoi‐Sing Kwok
标识
DOI:10.1002/aelm.202300351
摘要
Abstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible light detection. This study presents an industry process‐compatible method to achieve visible light detection in IGZO TFTs through N 2 treatment during the sputtering and annealing process for the first time. A comparison with control IGZO TFTs shows that the N 2 ‐treated IGZO TFTs exhibit a high responsivity of 0.66 A W −1 and detectivity of 5.40 × 10 14 Jones for visible light detection. Based on X‐ray photoelectron spectroscopy analysis and technology computer‐aided design simulations, a model, focusing on oxygen vacancy modulation, is proposed to explain the visible‐light sensitivity in IGZO TFTs with N 2 treatment. This work opens up new possibilities for the integration of IGZO photodetector into AM display panels to realize in‐cell environmental detection and biometric recognition.
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