机制(生物学)
沉积(地质)
薄膜晶体管
原子层沉积
材料科学
纳米技术
光电子学
物理
薄膜
图层(电子)
生物
古生物学
量子力学
沉积物
作者
Seong Hun Yoon,Jae Seok Hur,Seon Woong Bang,Jae Kyeong Jeong
摘要
We reported the fabrication of indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) by plasma‐enhanced atomic‐layer‐deposition (PEALD) process using different surface reactivities of the precursor‐substrate combinations with controlled deposition sequences. In‐Zn‐Ga (Case II) exhibited favorable subthreshold swing (SS) values of 313 mV/decade, and moderate mobility (µFE) of 29.3 cm 2 /Vs compared to In‐Ga‐Zn (Case I) (84 mV/decade and 33.4 cm 2 /Vs).
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