Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

Abstract This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors (PDs) designed for high-resolution imaging from the visible to short-wavelength infrared (SWIR) spectrum. Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer (AL). Therefore, we propose a guided-mode resonance (GMR) structure to enhance the quantum efficiency (QE) of the InGaAs PDs in the SWIR region with only sub-micron-thick AL. The TiO x /Au-based GMR structure compensates for the reduced AL thickness, achieving a remarkably high QE (>70%) from 400 to 1700 nm with only a 0.98 μm AL InGaAs PD (defined as 1 μm AL PD). This represents a reduction in thickness by at least 2.5 times compared to previous results while maintaining a high QE. Furthermore, the rapid transit time is highly expected to result in decreased electrical crosstalk. The effectiveness of the GMR structure is evident in its ability to sustain QE even with a reduced AL thickness, simultaneously enhancing the transit time. This breakthrough offers a viable solution for high-resolution and low-noise broadband image sensors.