Polarization Enhanced GaN Separate-Absorption and Multiplication Ultraviolet Avalanche Photodiodes with ScGaN Interlayer

This article proposes a separate absorption and multiplication (SAM) GaN-based avalanche photodiode (APD) that achieves both high gain and low operating voltage by applying Sc-based ferroelectric material ScGaN in APDs. The avalanche gain of the proposed SAM APD with a low Sc composition p-ScGaN insertion layer reaches 7.2 × 10