Influence of different channel crystal orientation on performance of 4H-SiC MOSFET

In this paper, the SiC MOSFETs with different channel crystal orientation are all fabricated on the 6-inch (0001) 4H-SiC wafer. Preliminary measurements demonstrate that the fabricated 4H-SiC trench MOSFET with <11-20< channel crystal orientation has the highest carrier mobility and the strongest current capability of unit gate width. This high carrier mobility is consistent with the lowest interface state density. Finally, an enhanced 4H-SiC trench MOSEFT with breakdown voltage of 900V, specific on-resistance of 0.8 mΩ·cm² and threshold voltage of 4.2V was prepared based on the channel crystal orientation of <11-20<.