自旋电子学
反铁磁性
多铁性
拓扑绝缘体
拓扑(电路)
凝聚态物理
材料科学
磁化
自旋(空气动力学)
物理
铁电性
铁磁性
量子力学
光电子学
磁场
热力学
组合数学
电介质
数学
作者
Jialin Gong,Yang Wang,Yilin Han,Zhenxiang Cheng,Xiaotian Wang,Zhi‐Ming Yu,Yugui Yao
标识
DOI:10.1002/adma.202402232
摘要
Abstract Recently, the real topology has been attracting widespread interest in two dimensions (2D). Here, based on first‐principles calculations and theoretical analysis, we reveal the monolayer Cr 2 Se 2 O (ML‐CrSeO) as the first material example of a 2D antiferromagnetic (AFM) real Chern insulator (RCI) with topologically protected corner states. Unlike previous RCIs, we find that the real topology of the ML‐CrSeO is rooted in one certain mirror subsystem of the two spin channels, and can not be directly obtained from all the valence bands in each spin channel as commonly believed. In particular, due to antiferromagnetism, the corner modes in ML‐CrSeO exhibit strong corner‐contrasted spin polarization, leading to spin‐corner coupling (SCC). This SCC enables a direct connection between spin space and real space. Consequently, large and switchable net magnetization can be induced in the ML‐CrSeO nanodisk by electrostatic means, such as potential step and in‐plane electric field, and the corresponding magnetoelectric responses behave like a sign function, distinguished from that of the conventional multiferroic materials. Our work considerably broadens the candidate range of RCI materials, and opens up a new direction for topo‐spintronics and 2D AFM materials research. This article is protected by copyright. All rights reserved
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