神经形态工程学
记忆电阻器
电阻随机存取存储器
计算机体系结构
共价有机骨架
电阻式触摸屏
计算机科学
钥匙(锁)
电导
材料科学
纳米技术
电压
人工智能
人工神经网络
电子工程
工程类
物理
电气工程
计算机视觉
复合材料
多孔性
计算机安全
凝聚态物理
作者
Pan‐Ke Zhou,Yiping Li,Zeng Tao,Mun Yin Chee,Yu-Xing Huang,Ziyue Yu,Hongling Yu,Hong Yu,Weiguo Huang,Xiong Chen
标识
DOI:10.1002/anie.202402911
摘要
Abstract Memristors are essential components of neuromorphic systems that mimic the synaptic plasticity observed in biological neurons. In this study, a novel approach employing one‐dimensional covalent organic framework (1D COF) films was explored to enhance the performance of memristors. The unique structural and electronic properties of two 1D COF films (COF‐4,4′‐methylenedianiline (MDA) and COF‐4,4′‐oxydianiline (ODA)) offer advantages for multilevel resistive switching, which is a key feature in neuromorphic computing applications. By further introducing a TiO 2 layer on the COF‐ODA film, a built‐in electric field between the COF‐TiO 2 interfaces could be generated, demonstrating the feasibility of utilizing COFs as a platform for constructing memristors with tunable resistive states. The 1D nanochannels of these COF structures contributed to the efficient modulation of electrical conductance, enabling precise control over synaptic weights in neuromorphic circuits. This study also investigated the potential of these COF‐based memristors to achieve energy‐efficient and high‐density memory devices.
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