High-resolution projection lithography for MEMS-applications using thick photoresist AZ 10XT

In this paper, we are using high-resolution projection lithography together with AZ 10XT thick photoresist to realize an etching mask, which can be used for deep reactive ion etching (DRIE). With a design of experiment (DoE) suitable parameters for a full wafer level process are investigated. Structures with different size from 0.5 μm to 5 μm are used to find the highest aspect ratios for MEMS-applications.