模板
纳米压印光刻
抵抗
材料科学
纳米光刻
干法蚀刻
薄脆饼
电子束光刻
纳米技术
反应离子刻蚀
蚀刻(微加工)
平版印刷术
基质(水族馆)
光电子学
下一代光刻
制作
图层(电子)
医学
海洋学
替代医学
病理
地质学
作者
Zhen Shu,Wan Jing,Bing-rui Lu,Xie Shenqi,Chen Yifang,Xin-Ping Qu,Ran Liu
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2009-06-01
卷期号:30 (6): 066001-066001
标识
DOI:10.1088/1674-4926/30/6/066001
摘要
We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography (EBL) and a dry etch technique on a SiNx substrate, intended for large area manufacturing. To this end, the highly sensitive chemically amplified resist (CAR), NEB-22, with negative tone was used. The EBL process first defines the template pattern in NEB-22, which is then directly used as an etching mask in the subsequent reactive ion etching (RIE) on the SiNx to form the desired templates. The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied, indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask. Nevertheless, our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.
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