电压
离子
材料科学
航程(航空)
核工程
功率MOSFET
离子束
功率(物理)
晶体管
电气工程
场效应晶体管
MOSFET
原子物理学
物理
工程类
复合材料
量子力学
作者
S. Liu,Jean‐Marie Lauenstein,Véronique Ferlet-Cavrois,R. Marec,Federico J. Hernández,Leif Scheick,F. Bezerra,M. Muschitiello,C. Poivey,N. Sukhaseum,L. Coquelet,Huy Cao,D. Carrier,M. A. Brisebois,R. Mangeret,R. Ecoffet,Kenneth A. LaBel,Max Zafrani,Phillip Sherman
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2011-12-01
卷期号:58 (6): 2991-2997
被引量:33
标识
DOI:10.1109/tns.2011.2172958
摘要
This paper presents and explains test results showing the effect of ion species on the single event burnout (SEB) failure voltage using a SEB sensitive engineering power double diffused metal oxide silicon field effect transistor (DMOSFET). The analyses show the determining factor of tested SEB failure voltage is the ion species itself rather than test or beam conditions such as initial beam energy, surface linear energy transfer (LET), ion range, or ionized charge. Also, results from five test facilities and five test setups are compared to determine if there will be differences in test results when different test setups or different heavy ion accelerator facilities were used.
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