线性
单片微波集成电路
噪声系数
带宽(计算)
放大器
宽带
电子工程
电气工程
高电子迁移率晶体管
晶体管
低噪声放大器
工程类
电信
电压
作者
Gholamreza Nikandish,Alireza Yousefi,Milad Kalantari
出处
期刊:IEEE Microwave and Wireless Components Letters
[Institute of Electrical and Electronics Engineers]
日期:2016-09-26
卷期号:26 (10): 834-836
被引量:66
标识
DOI:10.1109/lmwc.2016.2605446
摘要
Design techniques to enhance bandwidth and linearity of broadband multistage low-noise amplifiers (LNAs) are presented. A feedback amplifier circuit is proposed to compensate for transistor gain roll-off with frequency in other amplifier stages and extend overall bandwidth. Moreover, a transistor width tapering in a multistage LNA is applied to improve linearity. These techniques are adopted in a three-stage monolithic microwave integrated circuit (MMIC) LNA implemented in a 0.1-μm GaAs pHEMT process. The LNA features 18-43 GHz bandwidth, 21.6 dB average gain, and 1.8-2.7 noise figure (NF). It exhibits output 1-dB compression point of 11.5 dBm at 30 GHz and consumes 70 mA bias current from a 2-V supply.
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