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静电放电
电子工程
安全操作区
电气工程
功率(物理)
晶体管
功率半导体器件
工程类
计算机科学
电压
物理
量子力学
作者
Y. Christoforou,D. Gajanana
出处
期刊:Electrical Overstress/Electrostatic Discharge Symposium
日期:2008-09-01
卷期号:: 317-324
摘要
A simple, area and power-loss efficient, portable and robust ESD protection method for DC/DC converters is presented. The method is based on MOS transistors operating in normal mode, replacing the snapback based design methods. Measurement results of a prototype fabricated on silicon showed good agreement with simulation and are reported.
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