Analytical model for the diode saturation current of point-contacted solar cells

Progress in Photovoltaics: Research and ApplicationsVolume 14, Issue 1 p. 1-12 Research Analytical model for the diode saturation current of point-contacted solar cells H. Plagwitz, Corresponding Author H. Plagwitz [email protected] Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, GermanyInstitut für Solarenergieforschung GmbH Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany.===Search for more papers by this authorR. Brendel, R. Brendel Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, GermanySearch for more papers by this author H. Plagwitz, Corresponding Author H. Plagwitz [email protected] Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, GermanyInstitut für Solarenergieforschung GmbH Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany.===Search for more papers by this authorR. Brendel, R. Brendel Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, GermanySearch for more papers by this author First published: 15 September 2005 https://doi.org/10.1002/pip.637Citations: 47AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract Point-contacted solar cells exhibit three-dimensional transport effects due to a spatially inhomogeneous surface recombination. Complex multi-dimensional finite element simulations are commonly applied to model such devices. This paper presents an empirical analytic equation for the diode saturation current of a point-contacted base of a solar cell that accounts for three-dimensional transport. The input parameters of the model that characterize the back surface are: recombination velocity at the contacts; recombination velocity between the contacts; fraction of surface area covered by the contacts; and the contact spacing. We test this model experimentally by conducting spatially resolved minority-carrier lifetime measurements on silicon wafers with point contacts of various sizes and spacings. The diode saturation currents derived from the lifetime measurements agree with the values predicted by the analytic model. Copyright © 2005 John Wiley & Sons, Ltd. REFERENCES 1 Green MA, Blakers AW, Zhao J, Milne AM, Wang A, Dai X. Characterization of 23-percent efficient silicon solar cells. IEEE Transactions on Electron Devices 1990; 37: 331–336. 2 Aberle A, Warta W, Knobloch J, Voss B. 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