半导体
电解质
肖特基势垒
材料科学
电容
矩形势垒
光电子学
本征半导体
凝聚态物理
化学
物理
电极
物理化学
二极管
标识
DOI:10.1088/0022-3727/11/4/003
摘要
Possible sources of deviations of semiconductor/metal and semiconductor/electrolyte Schottky barriers from ideality are discussed. The conditions under which the flat-band potential of the barrier can be determined by capacitance measurements are deduced. Results on the flat-band potential and the position of the band edges for several semiconductor/electrolyte barriers are given.
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