长石
电导率
材料科学
微晶
带隙
兴奋剂
电阻率和电导率
无定形固体
薄膜
半导体
分析化学(期刊)
结晶学
光电子学
纳米技术
化学
冶金
物理化学
物理
氧化物
色谱法
量子力学
作者
R. Nagarajan,A. D. Draeseke,A.W. Sleight,Janet Tate
摘要
CuCr 1−x Mg x O 2 , a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO2 is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm−1 in CuCr0.95Mg0.05O2, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm−1. Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 °C. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV.
科研通智能强力驱动
Strongly Powered by AbleSci AI