化学机械平面化
材料科学
抛光
磨料
泥浆
碳化硅
光催化
表面粗糙度
复合材料
化学工程
催化作用
化学
生物化学
工程类
作者
Wantang Wang,Baoguo Zhang,Yunhui Shi,Jiakai Zhou,Ru Wang,Nengyuan Zeng
标识
DOI:10.1016/j.apsusc.2021.151676
摘要
Silicon carbide (SiC) is challenging to process by chemical mechanical polishing (CMP) given its anomaly mechanical hardness and chemically inert. However, improving the SiC-CMP performance including machining efficiency and surface quality is critical for developing power semiconductor devices with low cost, high efficiency, and high stability. Here, this research aims at combining mixed abrasive slurry (MAS) with photocatalytic effect in the SiC-CMP process, thus enabling an efficient enhanced CMP technology with low-cost and high-performance. Specifically, this paper describes the fabrication process of MAS through a high-energy ball milling method and discusses the polishing performance of the slurry with or without the presence of UV irradiation. By using MAS consisting of Al2O3 and ZrO2 abrasives, a material removal rate of 694 nm/h and surface roughness (Ra) of 0.489 nm can be obtained under UV irradiation. Additionally, the abrasive morphology, element composition, particle size distribution, Zeta potential, and its chemical effect of the MAS are also analyzed. In particular, a two-step strategy, namely the preparation of MAS and polishing with UV irradiation, is proposed to enhance the SiC-CMP efficiency, and an in-depth analysis of the improvement mechanism for each step is discussed.
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