异质结
长石
光电子学
紫外线
X射线光电子能谱
紫外光电子能谱
光电探测器
材料科学
带隙
带偏移量
外延
半导体
光电二极管
氧化物
价带
纳米技术
物理
冶金
核磁共振
图层(电子)
作者
Jianjun Shi,Hongwei Liang,Xiaochuan Xia,Qasim Abbas
标识
DOI:10.1016/j.apsusc.2021.151010
摘要
Single-oriented CuGaO2 films have been successfully grown on β-Ga2O3 (2¯01) substrate by reactive deposition epitaxy. The energy band offsets and alignment at CuGaO2/β-Ga2O3 heterojunction are investigated by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). A type-II band alignment is identified at CuGaO2/β-Ga2O3 heterojunction with valence band offset (VBO) of 1.63 eV and conduction band offset (CBO) of 0.45 eV. The CuGaO2/β-Ga2O3 heterojunction based ultraviolet photodetector is prepared which exhibits an obvious ultraviolet (UV) photoresponse at zero bias voltage. The combination between β-Ga2O3 and wide bandgap delafossite oxide semiconductor may open up possibilities for next generation self-power deep UV optoelectronic devices in future.
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