黄铜矿
化学
电子结构
带隙
电子能带结构
局部密度近似
结晶学
化学键
计算化学
凝聚态物理
物理
铜
有机化学
作者
Tsuyoshi Maeda,Takahiro Wada
标识
DOI:10.1143/jjap.49.04dp07
摘要
Electronic structural calculations of chalcopyrite-type CuInSe 2 and its related compounds, CuGaSe 2 and CuAlSe 2 , were performed by a recently proposed screened-exchange local density approximation (sX-LDA) method. The theoretical band gaps of CuInSe 2 , CuGaSe 2 , and CuAlSe 2 , obtained by the conventional calculation method using a generalized gradient approximation (GGA) functional, were 0.04, 0.14, and 1.11 eV, respectively. These values were considerably underestimated in comparison with their experimental values of 1.04, 1.68, and 2.67 eV because the exchange–correlation energy was not precisely calculated. Therefore, electronic structural calculations of chalcopyrite-type CuInSe 2 and related compounds were performed with an sX-LDA functional to obtain accurate electronic structure. The present sX-LDA calculation successfully reproduced the band gaps of CuInSe 2 (0.96 eV), CuGaSe 2 (1.36 eV), and CuAlSe 2 (2.22 eV). The obtained electronic structures and band gap energies of CuInSe 2 , CuGaSe 2 , and CuAlSe 2 are discussed on the basis of schematic molecular orbital diagrams of tetrahedral CuSe 4 7- , InSe 4 5- , GaSe 4 5- , and AlSe 4 5- clusters.
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