高-κ电介质
电介质
材料科学
堆栈(抽象数据类型)
图层(电子)
氧气
栅极电介质
电子顺磁共振
谱线
分析化学(期刊)
光谱学
凝聚态物理
沉积(地质)
晶体管
光电子学
化学
核磁共振
电压
纳米技术
色谱法
沉积物
程序设计语言
计算机科学
有机化学
古生物学
物理
天文
生物
量子力学
作者
G. Bersuker,C. S. Park,Joel Barnett,Patrick Lysaght,P. D. Kirsch,Chadwin D. Young,Rino Choi,B. H. Lee,Brendan Foran,Klaus van Benthem,S. J. Pennycook,Patrick M. Lenahan,Jason T. Ryan
摘要
The influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting, pre-high-k deposition thickness of the IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures of the high-k-induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature processing generates oxygen vacancies in the IL responsible for the observed trend in transistor performance.
科研通智能强力驱动
Strongly Powered by AbleSci AI