锡
弹性后坐力检测
材料科学
氧气
接触电阻
等离子体
分析化学(期刊)
冶金
复合材料
化学
薄膜
纳米技术
图层(电子)
物理
有机化学
量子力学
色谱法
作者
L. Ouellet,Yves Tremblay,G. Gagnon,Mario Caron,J. F. Currie,S. C. Gujrathi,M. Biberger,R. Reynolds
摘要
This article demonstrates that the exposure of a TiN barrier to an ex situ oxygen plasma results in a more stable TiN/AlSiCu interface up to temperatures of 600 °C as shown by the time-of-flight elastic recoil detection measurements. A quaternary phase diagram of the Al–Ti–O–N system was calculated in the range of temperatures between 450 and 550 °C and suggests that the stabilization of the TiN/AlSiCu interface is possible since oxidized TiN reacts with Al to form AlN, TiAl3 and Al2O3 at the interface. A Ti/TiN/(oxygen plasma exposure)/AlSiCu/TiN contact metallization in 1.2-μm-diam and 1.4-μm-deep straight wall contacts to 0.2-μm-deep N+ and P+ diffusions, to gate polysilicon as well as to capacitor polysilicon shows stable electrical results even after a [(450 °C, 60 min)+(500 °C, 60 min)+(550 °C, 60 min)] combined thermal stress.
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