Thermal and Damp Heat Stability of High‐Mobility In2O3‐Based Transparent Conducting Films Fabricated at Low Process Temperatures

Transparent Conductive Oxide Polycrystalline In2O3:Me (Me: W, Ce) and solid-phase crystallized In2O3:Me,H films with high electron mobility can be fabricated at low process temperatures of ≈200 °C by ion plating with DC arc discharge, known as high-density plasma enhanced evaporation or reactive plasma deposition (RPD). More details can be found in article number 2000487 by Takashi Koida and Yuko Ueno.