金属有机气相外延
材料科学
纳米技术
外延
图层（电子）
标识
DOI：10.1201/9781439807002
摘要
Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecomm
科研通智能强力驱动
Strongly Powered by AbleSci AI
寻道图强
爱静静
丰盛的煎饼
彭于彦祖
哎嘿
杳鸢
oceanao
加菲丰丰
shinysparrow
HEIKU
竹筏过海
贰鸟
淡淡的若冰
InfoNinja
ShowMaker
乐乐乐乐乐乐
不配.
YifanWang
tianzml0
岁月如酒
皖公网安备34019202002308
