电阻随机存取存储器
电容感应
材料科学
神经形态工程学
光电子学
电阻式触摸屏
介电谱
电阻抗
记忆电阻器
国家(计算机科学)
电压
电气工程
非易失性存储器
高电阻
导电体
工程物理
计算机科学
电极
物理
工程类
复合材料
电化学
算法
量子力学
机器学习
人工神经网络
生物
农学
作者
Vikas Kumar Sahu,Amit K. Das,R. S. Ajimsha,Pankaj Misra
标识
DOI:10.1016/j.ceramint.2022.09.188
摘要
The resistive switching phenomenon is attributed to local formation and rupture of conductive filaments (CF), however some aspects of the switching mechanism still need wider consensus. The origin of resistance contribution to low resistance state (LRS) and high resistance state (HRS) is although well known, the origin of capacitive contribution to the memory state of resistive random access memory device (RRAM) is ambiguous. Here we report impedance spectroscopic studies carried on Cu/TiO2/Pt devices to address the origin of resistive and capacitive contribution, where the effect of DC bias voltage, reset stop voltage and set compliance current on the impedance of RRAM memory states were investigated in detail. The studies revealed that the capacitive contribution was dominated by the surrounding TiO2 bulk and contrary to existing knowledge, gap formed owing to ruptured CF has negligible role. These studies also reaffirmed the origin of the resistive contribution to the HRS and LRS state, which was dictated by the ruptured gap and connected CF, respectively. Results of this study may be significant towards improving the switching time and operating frequency performance of futuristic memory, RF switch and neuromorphic computing applications of RRAM devices.
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