Graphene Lithography Based on Laser Reduction and Plasma Oxidization for Rewritable Hologram Imaging

Abstract Graphene lithography is crucial for various graphene‐based devices, showing considerable potential in the fields of energy, environment, electronics, and optics. Recent reports show that graphene can be facilely fabricated and simultaneously patterned without masks via laser direct writing on a graphene oxide (GO) film. Thus, this laser‐reduced graphene oxide (LRGO) is successfully applied for graphene holograms with advantages of being ultra‐thin, wide‐angle viewing, and full‐color display. However, owing to the absence of an effective approach for oxidizing LRGO, the graphene holograms are only written once, not rewritable. This study demonstrates that LRGO can be oxidized with oxygen plasma treatment, enabling the development of rewritable graphene holograms through laser reduction and plasma oxidization. Laser irradiation can directly reduce GO and simultaneously achieve patterning. The oxygen plasma treatment gradually oxidizes and removes the as‐prepared LRGO. Using a computer‐calculated hologram pattern, the laser system can manufacture a thin graphene hologram in seconds. The fabricated graphene hologram image can be erased with oxygen plasma treatment, preparing the GO film for new hologram writing. This facile, low‐cost, erasable graphene lithography process paves the way for various graphene applications in metasurfaces, device fabrication, imaging, data storage, and displays.