16.1: Characteristics of Ln‐doped IZO TFT according to the Change of Indium concentration for DeMUX Applications

In order to narrow the bezel in high‐end IT and tablets, using switching circuit de‐multiplexer (DeMUX) reduces the number of source D/IC, making small LCD module available. In this study, new oxide TFT material, Ln‐doped InZnO (Ln‐IZO), has been developed. To achieve mobility of > 25cm 2 /V.s, study focused on the effect of Indium (In) concentration on the fabrication of Ln‐IZO sputtering target, and fabricated the DeMUX‐equipped 14 inch FHD driven by gate on array (GOA).