Phosphorescent‐Dye‐Sensitized Quantum‐Dot Light‐Emitting Diodes with 37% External Quantum Efficiency

Exciton harvesting is of paramount importance for quantum-dot light-emitting diodes (QLEDs). Direct exciton harvesting by the quantum dots (QDs) emitting layer suffers from poor hole injection due to the low conduction bands and valence bands of QDs, leading to unbalanced electron-hole injection and recombination. To address this issue, here, an exciton sensitizing approach is reported, where excitons form on a phosphorescent-dye-doped layer, which then transfer their energies to adjacent QDs layer for photon emission. Due to the very efficient exciton formation and energy-transfer processes, higher device performance can be achieved. To demonstrate the above strategy, red QLEDs with a phosphorescent dye, iridium (III) bis(2-methyldibenzo-[f,h]quinoxaline) (acetylacetonate), Ir(MDQ)2 (acac), doped hole-transporting layer are fabricated and studied. At a doping concentration of 10 wt%, the best device achieves record high current efficiency, power efficiency, and external quantum efficiency (EQE) of 37.3 cd A-1 , 41 lm W-1 , and 37%, respectively. Simultaneously, the efficiency roll-off characteristic is greatly improved, in that 35% EQE can be well retained at a high luminance level of 450 000 cd m-2 . Moreover, the devices also exhibit good stability and reproducibility.