散射
晶体管
介电常数
凝聚态物理
库仑
渡线
材料科学
库仑阻塞
屏蔽效应
门控
电介质
物理
光电子学
电子
电压
量子力学
计算机科学
人工智能
生理学
生物
作者
Shihao Ju,Bingjie Liang,Jian Zhou,Danfeng Pan,Yi Shi,Songlin Li
出处
期刊:Nano Letters
[American Chemical Society]
日期:2022-08-03
卷期号:22 (16): 6671-6677
被引量:8
标识
DOI:10.1021/acs.nanolett.2c02023
摘要
Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction distance, and density of Coulomb impurities. We systematically collect and analyze the trends of electron mobility with respect to the above factors, realized by synergic modulations on channel thicknesses and gating modes in dual-gated MoS2 transistors with asymmetric dielectric cleanliness. Strict configurative form factors are developed to capture the subtle parametric changes across dimensional crossover. A full diagram of the carrier scattering mechanisms, in particular on the pronounced Coulomb scattering, is unfolded. Moreover, we clarify the presence of up to 40% discrepancy in mobility by considering the permittivity modification across dimensional crossover. The understanding is useful for exploiting atomically thin body transistors for advanced electronics.
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