拉曼光谱
光子计数
光谱学
时滞与积分
CMOS芯片
材料科学
光电子学
光学
分析化学(期刊)
物理
探测器
化学
色谱法
量子力学
作者
Tuomo Talala,Eetu Virta,Ilkka Nissinen
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2023-05-01
卷期号:58 (5): 1350-1361
被引量:1
标识
DOI:10.1109/jssc.2022.3212549
摘要
A 256-channel single-photon avalanche diode (SPAD) line sensor was designed for time-resolved Raman spectroscopy in 110-nm CMOS technology. The line sensor consists of an 8 $\times$ 256 SPAD array and 256 parallel connected time-to-digital converters (TDCs). The adjustable temporal resolution and dynamic range of TDCs are 25.6–65 ps and 3.2–8.2 ns, respectively. The median timing skew along 256 channels is 43.7 ps, and TDC bin boundaries can be fine-tuned at the ps-level to enable precise timing skew compensation. The sensor is capable of real-time dark count measurement (two dark measurements for each excitation pulse) that gives accurate data for dark count compensation without any increment in measurement time. The maximum excitation pulse rate with real-time dark count measurement is 680 kHz. Raman spectra of six different samples were measured to prove the performance of the sensor in time-resolved Raman spectroscopy.
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