A 24-41.5 GHz LNA with Enhanced IP1dB in 65-nm BULK CMOS for 5G Applications

This paper presents a wideband low-noise amplifier (LNA) for 5G applications operating from 24 to 41.5 GHz. The LNA consumes 42.6 mA from 1.2 V supply. A conventional diode connected linearization transistor was used to enhance the third-order input intercept point (IIP3) without improving the input 1dB compression point (IP1dB). A new technique to enhance the IP1dB to improve the LNA input dynamic range is introduced that enhances the IP1dB by 3dB at 41.5 GHz over the conventional diode connected linearization technique with only 2.5% increase in the dc current consumption. The LNA minimum and maximum noise Figure (NF) are 2.45 and 3.26 dB respectively. The LNA IIP3 ranges from -4 dBm to -8.5 dBm across the frequency band while achieving a peak gain of 25.88 dB.