异质结
材料科学
红外线的
光电探测器
光电子学
纳米尺度
纳米技术
接触电阻
探测器
工程物理
光学
计算机科学
电信
物理
工程类
图层(电子)
作者
Fengtian Xia,Dongbo Wang,Jiamu Cao,He Wen,Chenchen Zhao,Zhi Zeng,Bingke Zhang,Donghao Liu,Sihang Liu,Jingwen Pan,Gang Liu,Shujie Jiao,Dan Fang,Xuan Fang,Lihua Liu,Liancheng Zhao,Jinzhong Wang
标识
DOI:10.1021/acsami.4c04447
摘要
With their fascinating properties, emerging two-dimensional (2D) materials offer innovative ways to prepare high-performance infrared (IR) detectors. However, the current performance of 2D IR photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, sharply raised contact resistance, and deteriorated metal conductivity at nanoscale. Here, we introduce a vertical barrier heterojunction with a structure of PtSe
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