光电子学
紫外线
二极管
激光器
材料科学
量子阱
半导体激光器理论
光学
物理
作者
Ziyi Zhang,Maki Kushimoto,Akira Yoshikawa,Koji Aoto,Chiaki Sasaoka,Hiroshi Amano
摘要
The gain characteristics of electrically injected AlGaN-based deep-ultraviolet laser diodes were studied with respect to their quantum-well (QW) width dependence by the analysis of the threshold currents and gains for various cavity lengths. Among the fabricated QWs with widths of d = 9, 4.5, and 3 nm, the QW with the smallest width of 3 nm was found to have the highest material gain and lowest transparency carrier density. In contrast to recent arguments in favor of wider QWs for deep-ultraviolet laser diodes, the strategy of narrowing QWs is still found to be effective in practical terms of reducing the threshold current density.
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