小型化
神经形态工程学
材料科学
光电子学
响应度
半导体
光电导性
光子学
光电探测器
计算机科学
纳米技术
人工智能
人工神经网络
作者
Can Fu,Jiawei Yang,Jiang Wang,Sheng‐Hui Luo,Lin‐Bao Luo,Huanhuan Wei,Yujiao Li,Shanshan Jiang,Gang He
标识
DOI:10.1002/adma.202409406
摘要
Abstract High‐performance semiconductor devices capable of multiple functions are pivotal in meeting the challenges of miniaturization and integration in advanced technologies. Despite the inherent difficulties of incorporating dual functionality within a single device, a high‐performance, dual‐mode device is reported. This device integrates an ultra‐thin Al 2 O 3 passivation layer with a PbS/Si hybrid heterojunction, which can simultaneously enable optoelectronic detection and neuromorphic operation. In mode 1, the device efficiently separates photo‐generated electron‐hole pairs, exhibiting an ultra‐wide spectral response from ultraviolet (265 nm) to near‐infrared (1650 nm) wavelengths. It also reproduces high‐quality images of 256 × 256 pixels, achieving a Q ‐value as low as 0.00437 µW cm − 2 at a light intensity of 8.58 µW cm − 2 . Meanwhile, when in mode 2, the as‐assembled device with typical persistent photoconductivity (PPC) behavior can act as a neuromorphic device, which can achieve 96.5% accuracy in classifying standard digits underscoring its efficacy in temporal information processing. It is believed that the present dual‐function devices potentially advance the multifunctionality and miniaturization of chips for intelligence applications.
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