肖特基势垒
材料科学
空位缺陷
凝聚态物理
阿伦尼乌斯图
场效应晶体管
兴奋剂
欧姆接触
光电子学
载流子散射
阿累尼乌斯方程
单层
散射
晶体管
活化能
纳米技术
化学
二极管
物理
光学
图层(电子)
有机化学
电压
量子力学
作者
Jungchun Kim,Gwang Hwi An,Seain Bang,Dong Geun Park,Donghyun Kim,Seunghee Jin,Min Jung Kim,Hyun Seok Lee,Jae Woo Lee
标识
DOI:10.1016/j.apsusc.2022.154600
摘要
• We investigated the Schottky barrier (SB) characteristics depending on the S vacancy (SV) and W vacancy (WV) in hexagonal WS 2 field-effect transistors (FETs) • In comparison to the WV FET, the SV FET exhibited a 10 times higher doping concentration and 4 times higher Coulomb scattering coefficient. • The comparative SB characteristics of both FETs were investigated by Arrhenius plot for the on-current at high temperatures. A major bottleneck in the applications of two-dimensional transition metal dichalcogenides (TMDs) is the realization of ohmic contacts by overcoming the Schottky barrier (SB) at metal-semiconductor interfaces. Although the physical properties of point defects in TMDs are the key to determining the SB characteristics, the correlation between the defect types and SBs is yet to be systematically explored. Here, we investigated the SB characteristics depending on the S vacancy (SV) and W vacancy (WV) in hexagonal WS 2 field-effect transistors (FETs). This was implemented by fabricating the SV and WV FETs in each domain on a single-flake monolayer. Compared to WV FET, the SV FET exhibited a 10 times higher doping concentration and 4 times higher Coulomb scattering coefficient (α) resulting in higher low-frequency noise. The comparative SB characteristics of both FETs were investigated by Arrhenius plot for the on-current at high temperatures. Below 360 K, the activation energies (E a ) of the SV and WV FETs exhibited different values of 0.071 and 0.115 eV, respectively, whereas those values are similar above 360 K because sufficient thermal energy allows for tunneling at SBs. These results help us understand the correlation between the defect type, doping level, and SB in TMD-based electronic devices.
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