CsPbBr3 perovskite quantum dots/p-GaN heterojunction for ultraviolet-visible spectrum photodetectors

All-inorganic perovskites have attracted increasing attention because of their strong environmental stability and excellent photoelectric properties. However, the limited spectral response range of perovskite photodetectors restricts them in practical applications. In this work, an ultraviolet–visible photodetector with a wide spectral response and a high responsivity was prepared by constructing a CsPbBr3 quantum dots (QDs)/p-GaN heterojunction. The type-II energy band alignment formed by the heterojunction is conducive to the transport of photogenerated carriers, resulting in a high responsivity. Under certain conditions, the device can obtain responsivity values of 5 A/W and 850 mA/W under 350 and 725 nm illumination, respectively, which are comparable to those of other perovskite-based photodetectors. In addition, the photoresponse mechanism of the device is revealed through first-principles calculations of the heterojunction and the device. The enhanced light absorption of the heterojunction and the special band bending under different bias voltages improve the photoelectric performance of the device. This work can provide valuable insights into high-performance photodetectors based on all-inorganic perovskite QDs heterojunctions in terms of band regulation and device performance improvement.