材料科学
光探测
光电子学
电致发光
偏压
异质结
紫外线
发光二极管
反向偏压
极化(电化学)
光学
光电探测器
电压
物理
纳米技术
化学
物理化学
二极管
图层(电子)
量子力学
作者
Jiangnan Dai,Jingwen Chen,Xiaohang Li,Jun Zhang,Hanling Long,Hao‐Chung Kuo,Yunbin He,Chang Chen
出处
期刊:Optics Letters
[The Optical Society]
日期:2019-04-05
卷期号:44 (8): 1944-1944
被引量:1
摘要
We report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum.
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